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PDF 2SC5609 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5609 | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistors
2SC5609
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SA2021
I Features
• High foward current transfer ratio hFE
• SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
60
50
7
200
100
100
125
−55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5˚
Unit: mm
0.10+–00..0025
1: Base
2: Emitter
3: Collector
SSS Mini Type Package (3-pin)
Marking Symbol: 3F
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Collector output capacitance
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE1
hFE2
VCE(sat)
Cob
fT
VCB = 20 V, IE = 0
0.1 µA
VCE = 10 V, IB = 0
100 µA
IC = 10 µA, IE = 0
60
V
IC = 2 mA, IB = 0 50 V
IE = 10 µA, IC = 0
7
V
VCE = 10 V, IC = 2 mA
180 390
VCE = 2 V, IC = 100 mA
90
IC = 100 mA, IB = 10 mA
0.1 0.3
V
VCB = 10 V, IE = 0, f = 1 MHz
3.5 pF
VCB = 10 V, IE = −2 mA, f = 200 MHz
80
MHz
1
1 page | ||
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| PDF Descargar | [ Datasheet 2SC5609.PDF ] | |
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