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PDF 2SC5518 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5518 | |
| Descripción | Silicon NPN triple diffusion mesa type(For horizontal deflection output) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SC5518
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VEBO
ICP
IC
IB
PC
1500
1500
5
14
7
3.5
40
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
15.5±0.5
φ3.2±0.1
3.0±0.3
5° 5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Collector cutoff current
ICBO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Diode forward voltage
VEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VF
Conditions
VCB = 1000V, IE = 0
VCB = 1500V, IE = 0
IE = 500mA, IC = 0
VCE = 5V, IC = 5A
IC = 5A, IB = 1A
IC = 5A, IB = 1A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 5A, IB1 = 1A, IB2 = –2A
IF = 5A
min typ max Unit
50 µA
1 mA
5V
5 10
3V
1.5 V
3 MHz
5.0 µs
0.5 µs
–2 V
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC5518.PDF ] | |
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