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PDF 2SC5463 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5463 | |
| Descripción | Silicon NPN Epitaxial Planar Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5463
2SC5463
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure, high gain.
• NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
20
12
3
60
30
100
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
S21e2 (1)
S21e2 (2)
NF (1)
NF (2)
VCE = 8 V, IC = 15 mA
VCE = 8 V, IC = 15 mA, f = 500 MHz
VCE = 8 V, IC = 15 mA, f = 1 GHz
VCE = 8 V, IC = 5 mA, f = 500 MHz
VCE = 8 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
5 7 GHz
17.5
8 12
dB
1
dB
1.1
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 8 V, IC = 15 mA
Cob VCB = 8 V, IE = 0, f = 1 MHz
Cre
(Note 2)
80
1
1
240
0.8
0.55
µA
µA
pF
pF
Note 1: hFE classification O: 80~100, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-07-31
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC5463.PDF ] | |
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