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PDF 2SC5416 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5416 | |
| Descripción | Inverter Lighting Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number : EN5696
NPN Triple Diffused Planar Silicon Transistor
2SC5416
Inverter Lighting Applications
Features
• High breakdown voltage.
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions
unit: mm
2079B-TO220FI (LS)
[2SC5416]
10.0
3.2
4.5
2.8
0.9
1.2
0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
Tc=25°C
Junction Temperature
Tj
Storage Temperature
Tstg
0.75
1 23
2.55 2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO220FI (LS)
Ratings
1000
450
9
4
8
2
25
150
–55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
C-E Saturation Voltage
B-E Saturation Voltage
DC Current Gain
Storage Time
Fall Time
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
hFE(1)
hFE(2)
tstg
tf
VCB=450V, IE=0
VCE=1000V, RBE=0
IC=100mA, IB=0
VEB=9V, IC=0
IC=2A, IB=0.4A
IC=2A, IB=0.4A
VCE=5V, IC=0.1A
VCE=5V, IC=1.5A
IC=2A, IB1=0.4A, IB2=–0.8A
IC=2A, IB1=0.4A, IB2=–0.8A
Ratings
Unit
min typ max
10 µA
1.0 mA
450 V
1.0 mA
1.0 V
1.5 V
30 40 50
10
2.5 µs
0.15 µs
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51598TS (KOTO) TA-1059 No.5696-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC5416.PDF ] | |
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