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Número de pieza | 2SC5414 | |
Descripción | High-Frequency Low-Noise Amplifier Applications | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC5414 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Ordering number:ENN5910
NPN Epitaxial Planar Silicon Transistor
2SC5414
High-Frequency
Low-Noise Amplifier Applications
Features
· High gain : S21e2=9.5dB typ (f=1GHz).
· High cutoff frequency : fT=6.7GHz typ.
Package Dimensions
unit:mm
2004B
[2SC5414]
5.0
4.0
4.0
0.45
0.5
0.45 0.44
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
ICBO
IEBO
hFE1
hFE2
fT
Cob
Cre
| S21e |2
NF
* The 2SC5414 is classified by 30mA hFE as follows : 90
VCB=10V, IE=0
VEB=1V, IC=0
VCE=5V, IC=30mA
VCE=5V, IC=70mA
VCE=5V, IC=30mA
VCB=5V, f=1MHz
VCB=5V, f=1MHz
VCE=5V, IC=30mA, f=1GHz
VCE=5V, IC=7mA, f=1GHz
E 180 135 F 270
123
1.3 1.3
1 : Base
2 : Emitter
3 : Collector
SANYO : NP
Ratings
20
12
2
100
400
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
Ratings
min typ
90*
70
5 6.7
1.0
0.6
8 9.5
1.1
max
1.0
10
270*
1.5
2.0
Unit
µA
µA
GHz
pF
pF
dB
dB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-1023 No.5910–1/6
1 page VCE=5V, IC=10mA, ZO=50Ω
Freq (MHz)
100
| S11 |
0.664
200 0.450
400 0.264
600 0.206
800 0.175
1000
0.163
1200
0.156
1400
0.158
1600
0.174
1800
0.188
2000
0.212
VCE=5V, IC=30mA, ZO=50Ω
Freq (MHz)
| S11 |
100 0.423
200 0.258
400 0.155
600 0.129
800 0.119
1000
0.116
1200
0.119
1400
0.129
1600
0.146
1800
0.160
2000
0.187
VCE=5V, IC=50mA, ZO=50Ω
Freq (MHz)
100
| S11 |
0.381
200 0.251
400 0.185
600 0.174
800 0.163
1000
0.167
1200
0.176
1400
0.184
1600
0.197
1800
0.214
2000
0.243
∠ S11
–52.5
–85.2
–124.5
–153.2
–178.9
159.7
135.8
115.9
95.5
77.7
62.7
∠ S11
–71.0
–103.4
–145.0
173.2
161.6
140.1
117.4
98.0
79.7
65.1
54.4
∠ S11
–82.7
–120.2
–164.6
170.5
149.4
130.7
112.8
96.6
80.7
68.1
55.0
2SC5414
| S21 |
19.156
13.004
7.320
5.075
3.884
3.190
2.715
2.376
2.127
1.938
1.788
∠ S21
134.9
110.4
86.3
70.9
58.1
46.8
35.0
24.3
14.0
4.1
–5.6
| S12 |
0.029
0.044
0.069
0.095
0.122
0.150
0.178
0.204
0.233
0.262
0.292
| S21 |
26.259
15.300
8.070
5.493
4.203
3.436
2.914
2.545
2.284
2.064
1.913
∠ S21
120.2
99.6
80.5
67.5
55.9
45.4
34.2
24.3
14.2
4.9
–4.9
| S12 |
0.024
0.038
0.068
0.098
0.129
0.160
0.190
0.219
0.249
0.278
0.308
| S21 |
25.958
14.443
7.561
5.153
3.904
3.194
2.696
2.358
2.115
1.908
1.766
∠ S21
114.6
95.9
78.0
64.8
52.8
41.9
31.0
20.5
10.1
0.1
–9.6
| S12 |
0.023
0.037
0.067
0.096
0.127
0.157
0.187
0.216
0.246
0.275
0.305
∠ S12
65.7
58.6
55.5
53.3
48.7
43.8
37.8
31.8
25.5
19.0
12.0
∠ S12
66.3
65.6
63.8
59.1
53.1
46.5
39.4
32.5
25.3
18.2
10.7
∠ S12
65.6
65.8
64.0
59.6
53.5
47.1
39.8
32.9
25.9
18.8
11.1
| S22 |
0.807
0.621
0.490
0.450
0.444
0.446
0.446
0.448
0.439
0.434
0.431
| S22 |
0.647
0.482
0.405
0.388
0.390
0.396
0.401
0.398
0.393
0.389
0.386
| S22 |
0.611
0.465
0.405
0.396
0.401
0.406
0.410
0.409
0.404
0.400
0.392
∠ S22
–26.7
–36.3
–42.7
–48.6
–56.0
–64.0
–72.4
–80.6
–88.9
–96.9
–105.3
∠ S22
–32.7
–36.2
–39.6
–45.9
–54.2
–62.7
–71.8
–80.2
–88.6
–96.9
–105.3
∠ S22
–32.2
–34.5
–38.7
–46.0
–54.9
–63.5
–72.9
–81.5
–90.3
–98.2
–106.2
No.5910–5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2SC5414.PDF ] |
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2SC5414 | High-Frequency Low-Noise Amplifier Applications | Sanyo Semicon Device |
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