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PDF 2SC5405 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5405 | |
| Descripción | Silicon NPN triple diffusion planar type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SC5405
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
Unit: mm
s Features
q High-speed switching
q High forward current transfer ratio hFE which has satisfactory
linearity
q Dielectric breakdown voltage of the package: > 5kV
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
80
50
6
6
3
1
20
2.0
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 80V, IE = 0
VCE = 40V, IB = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
VCE = 12V, IC = 0.2A, f = 10MHz
IC = 1A, IB1 = 0.05A, IB2 = – 0.1A,
VCC = 50V
9.9±0.3
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.54±0.3
1 2 3 5.08±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
min typ max Unit
100 µA
100 µA
100 µA
50 V
500 1500
0.5 0.7
V
V
75 MHz
0.3 µs
3.5 µs
0.9 µs
*hFE Rank classification
Rank
P
Q
hFE 800 to 1500 500 to 1000
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC5405.PDF ] | |
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