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PDF 2SC5359 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5359 | |
| Descripción | Silicon NPN Triple Diffused Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC5359 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5359
Power Amplifier Applications
2SC5359
Unit: mm
• High breakdown voltage: VCEO = 230 V
• Complementary to 2SA1987
• Suitable for use in 100-W high fidelity audio amplifier’s output stage.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 230 V
Collector-emitter voltage
VCEO 230 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 15 A
Base current
IB 1.5 A
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
PC 180 W
Tj 150 °C
T stg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-21F1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 9.75 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2012-08-31
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC5359.PDF ] | |
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