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PDF 2SC5354 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5354 | |
| Descripción | Silicon NPN Triple Diffused Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5354
High-Speed and High-Voltage Switching Applications
Switching Regulator Applications
High-Speed DC-DC Converter Applications
2SC5354
Unit: mm
• Excellent switching times: tr = 0.7 μs (max)
tf = 0.5 μs (max) (IC = 2 A)
• High breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
900
800
7
5
8
2
100
150
−55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2009-07-17
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC5354.PDF ] | |
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