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PDF 2SC5319 Data sheet ( Hoja de datos )

Número de pieza 2SC5319
Descripción Silicon NPN Epitaxial Planar Type Transistor
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! 2SC5319 Hoja de datos, Descripción, Manual

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5319
2SC5319
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure: NF = 1.3dB (f = 2 GHz)
High gain: S21e2 = 11.5dB (f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 8 V
Collector-emitter voltage
VCEO 5 V
Emitter-base voltage
VEBO 1.5 V
Collector current
IC 20 mA
Base current
IB 10 mA
Collector power dissipation
PC 100 mW
Junction temperature
Tj 125 °C
1,3 EMITTER
Storage temperature range
Tstg
55 to 125
°C
2 COLLECTOR
4 BASE
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
reliability significantly even if the operating conditions (i.e.
JEITA
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-2K1A
Please design the appropriate reliability upon reviewing the
Weight: 6 mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Transition frequency
Insertion gain
Noise figure
fT
S21e2 (1)
S21e2 (2)
NF (1)
NF (2)
VCE = 3 V, IC = 15 mA
VCE = 3 V, IC = 15 mA, f = 1 GHz
VCE = 3 V, IC = 15 mA, f = 2 GHz
VCE = 3 V, IC = 5 mA, f = 1 GHz
VCE = 3 V, IC = 5 mA, f = 2 GHz
Electrical Characteristics (Ta = 25°C)
Min Typ. Max Unit
13 16 GHz
14.5 17
8.5 11.5
dB
0.9 1.8
dB
1.3 2.2
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
IEBO
hFE
Cob
Cre
VCB = 6 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 15 mA
VCB = 2.5 V, IE = 0, f = 1 MHz (Note)
50
Note: Cre is measured by 3 terminal method with capacitance bridge.
1
Typ. Max Unit
1 μA
1 μA
250
0.6 pF
0.4 0.85 pF
2010-06-20

1 page




2SC5319 pdf
VCE = 3 V, IC = 5 mA
f S11
(MHz)
800
Mag.
0.539
Ang.
101.6
900
0.512
109.5
1000
0.498
114.8
1100
0.472
122.2
1200
0.461
126.3
1300
0.450
131.8
1400
0.439
136.7
1500
0.413
143.8
1600
0.435
146.5
1700
0.411
146.6
1800
0.402
153.7
1900
0.386
159.0
2000
0.386
161.9
2100
0.369
164.5
2200
0.368
168.2
2300
0.378
172.1
2400
0.398
170.2
S21
Mag.
Ang.
7.906
110.6
7.361
106.9
6.733
102.6
6.308
100.0
5.709
95.8
5.487
94.0
5.146
90.4
4.796
87.9
4.593
85.4
4.305
83.9
4.099
80.0
3.870
77.6
3.729
77.2
3.519
74.1
3.407
74.2
3.339
69.1
3.153
71.0
S12
Mag.
Ang.
0.093
47.0
0.098
45.0
0.102
43.5
0.105
42.9
0.108
41.9
0.109
41.9
0.112
42.6
0.116
42.8
0.121
43.3
0.126
42.5
0.128
41.5
0.129
41.5
0.131
41.4
0.133
42.4
0.138
42.6
0.140
41.8
0.140
42.4
2SC5319
S22
Mag.
Ang.
0.557
66.6
0.516
70.0
0.486
74.0
0.455
76.7
0.431
80.0
0.411
82.8
0.392
86.0
0.377
88.3
0.368
90.9
0.355
93.4
0.354
95.7
0.343
97.9
0.340
99.9
0.337
101.7
0.332
104.1
0.334
105.2
0.328
107.2
5 2010-06-20

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