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PDF 2SC5295 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5295 | |
| Descripción | Silicon NPN epitaxial planer type(For 2 GHz band low-noise amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistors
2SC5295
Silicon NPN epitaxial planer type
For 2 GHz band low-noise amplification
I Features
• High transition frequency fT
• Low collector output capacitance Cob
• SS-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
15
10
2
65
125
125
−55 to +125
Unit
V
V
V
mA
mW
°C
°C
0.2+–00..015
3
Unit: mm
0.15+–00..015
1
(0.5) (0.5)
1.0±0.1
1.6±0.1
2
5°
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SS-Mini Type Package (3-pin)
Marking Symbol: 3S
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio *
Transition frequency
Collector output capacitance
Forward transfer gain
Power gain
Noise figure
ICBO
IEBO
hFE
fT
Cob
| S21e | 2
GUM
NF
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 8 V, IC = 20 mA
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
VCE = 8 V, IC = 7 mA, f = 1.5 GHz
Note) *: Rank classification
Rank
Q
R
S
hFE 50 to 120 100 to 170 150 to 300
Min Typ Max Unit
1 µA
1 µA
50 300
7.0 8.5
GHz
0.6 1.0
pF
79
dB
10 dB
2.2 3.0
dB
1
1 page | ||
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| PDF Descargar | [ Datasheet 2SC5295.PDF ] | |
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