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PDF 2SC5178-T1 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5178-T1 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION | |
| Fabricantes | NEC | |
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DATA SHEET
SILICON TRANSISTOR
2SC5178
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain
|S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• 4-pin Mini-Mold package
EIAJ: SC-61
ORDERING INFORMATION
PART
NUMBER
2SC5178-T1
2SC5178-T2
QUANTITY
3000 units/reel
3000 units/reel
ARRANGEMENT
Embossed tape, 8 mm wide, pins
No. 3 (base) and No. 4 (emitter) facing
the perforations
Embossed tape, 8 mm wide, pins
No. 1 (collector) and No. 2 (emitter)
facing the perforations
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
5
Collector to Emitter Voltage VCEO
3
Emitter to Base Voltage
VEBO
2
Collector Current
IC 10
Total Power Dissipation
PT
30
Junction Temperature
Tj
150
Storage Temperature
Tstg –65 to +150
V
V
V
mA
mW
°C
°C
PACKAGE DIMENSIONS
(Units: mm)
2.8
+0.2
–0.3
1.5
+0.2
–0.1
5° 5°
5° 5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12102EJ2V0DS00 (2nd edition)
(Previous No. TC-2475)
Date Published November 1996 N
Printed in Japan
©
1994
1 page  
2SC5178
S-PARAMETER
VCE = 1 V, IC = 1 mA, ZO = 50 Ω
FREQUENCY
S11
(MHz)
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
0.954
0.933
0.902
0.855
0.798
0.739
0.667
0.597
0.519
0.472
0.413
0.365
0.306
0.280
0.259
ANG
–9.5
–19.1
–28.3
–38.2
–48.3
–59.2
–69.1
–77.4
–87.9
–97.7
–110.8
–123.4
–135.0
–154.3
–174.4
VCE = 1 V, IC = 3 mA, ZO = 50 Ω
FREQUENCY
S11
(MHz)
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
0.878
0.789
0.694
0.589
0.501
0.423
0.340
0.280
0.221
0.196
0.157
0.160
0.135
0.181
0.204
ANG
–16.5
–31.1
–45.0
–56.7
–69.1
–80.2
–90.7
–100.1
–114.0
–125.8
–142.7
–168.6
162.2
148.5
127.6
S21
MAG
3.362
3.305
3.251
3.204
3.113
3.032
2.892
2.719
2.626
2.484
2.345
2.255
2.169
2.015
1.982
ANG
168.9
158.2
148.3
137.6
126.9
116.5
107.3
96.6
88.5
80.5
72.8
64.6
58.1
51.3
44.3
S21
MAG
8.193
7.559
6.833
6.147
5.496
4.936
4.427
3.975
3.672
3.347
3.066
2.893
2.715
2.530
2.438
ANG
161.7
145.1
130.9
118.1
106.8
96.9
88.7
80.0
73.1
66.4
60.4
53.8
48.4
42.5
36.8
S12
MAG
0.026
0.061
0.084
0.106
0.150
0.170
0.178
0.195
0.213
0.223
0.233
0.238
0.249
0.254
0.239
ANG
77.0
76.5
68.1
63.3
54.1
53.5
45.2
37.7
31.8
31.7
24.9
18.9
14.2
14.6
10.0
S22
MAG
0.989
0.972
0.941
0.917
0.890
0.842
0.769
0.729
0.675
0.634
0.582
0.530
0.496
0.452
0.461
ANG
–6.9
–13.5
–20.5
–27.6
–34.5
–40.8
–47.5
–52.4
–60.3
–64.6
–70.9
–77.0
–83.0
–88.0
–99.2
S12
MAG
0.030
0.054
0.075
0.095
0.115
0.120
0.140
0.141
0.163
0.181
0.176
0.199
0.202
0.214
0.218
ANG
68.5
72.2
64.4
53.7
53.5
52.5
47.1
41.7
40.1
34.6
33.4
30.6
28.2
29.8
24.2
S22
MAG
0.968
0.899
0.816
0.727
0.673
0.600
0.537
0.496
0.437
0.419
0.374
0.333
0.304
0.284
0.287
ANG
–11.6
–22.2
–30.8
–38.1
–45.4
–49.8
–54.3
–60.1
–66.0
–69.6
–75.8
–76.7
–85.6
–92.0
–99.7
5
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2SC5178
11
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| Número de pieza | Descripción | Fabricantes |
| 2SC5178-T1 | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION | NEC |
| 2SC5178-T2 | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION | NEC |
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