|
|
PDF 2SC5172 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5172 | |
| Descripción | NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SC5172 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC5172
2SC5172
Switching Regulator and High-Voltage Switching
Applications
High-Speed DC-DC Converter Applications
Unit: mm
• Excellent switching times: tr = 0.5 µs (max),
tf = 0.3 µs (max) at IC = 2 A
• High collector breakdown voltage: VCEO = 400 V
Maximum Ratings (Tc = 25°C)
Characteristics Sy
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC I
Pulse I
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
mbol
VCBO
VCEO
VEBO
C
CP 7
IB
PC
Tj
Tstg
Rating
600
400
7
5
2A
2.0
25
150
−55 to 150
Unit
V
V
V
A
W
°C
°C
JEDEC
―
JEITA
SC-67
TOSHIBA 2
-10R1A
Weight: 1.7 g (typ.)
Electrical Characteristics (Tc = 25°C)
Characteristics Sy
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
mbol
Test Condition
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
VCB = 500 V, IE = 0
VEB = 7 V, IC = 0
IC = 1 mA, IE = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 0.5 A
IC = 2 A, IB = 0.25 A
IC = 2 A, IB = 0.25 A
Min Typ. Max Unit
― ― 20
µA
― ― 100
nA
600 ―
―V
400 ―
―V
13 ― ―
20 ― 65
― ― 1. 0 V
― ― 1. 3 V
Rise time
Switching time Storage time
Fall time
tr
20 µs Input IB1
Output
―
― 0. 5
tstg
IB2
―
― 2. 0
µs
VCC ≈ 200 V
tf IB1 = 0.25 A, IB2 = −0.5 A,
duty cycle < 1%
1
― ― 0. 3
2004-07-26
http://www.Datasheet4U.com
1 page  
2SC5172
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein i s p resented only as a guide f or t he ap plications of our pr oducts. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may r esult f rom i ts u se. No l icense i s g ranted by i mplication or ot herwise u nder any p atent or pa tent r ights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general c an ma lfunction o r fa il due t o th eir inherent electrical s ensitivity and vulnerability to p hysical
stress. It i s th e r esponsibility of the buyer, w hen ut ilizing T OSHIBA pr oducts, t o c omply wit h th e sta ndards of
safety in m aking a s afe des ign for the entire s ystem, and t o avoid s ituations in which a m alfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set f orth i n t he m ost recent T OSHIBA p roducts s pecifications. Al so, pl ease k eep i n m ind t he precautions an d
conditions s et forth in the “Handling Guide for Semiconductor Devices,” or “ TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TO SHIBA pr oducts l isted i n this doc ument ar e intended f or u sage i n general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). T hese T OSHIBA p roducts a re neither i ntended nor wa rranted f or us age in equipment that r equires
extraordinarily high q uality and/or reliability or a malf unction or failure of which ma y c ause loss of hu man life or
bodily i njury (“Unintended Us age”). U nintended U sage i nclude atomic e nergy c ontrol i nstruments, airplane or
spaceship i nstruments, t ransportation instruments, traffic signal i nstruments, c ombustion control instruments,
medical instruments, a ll t ypes of s afety devi ces, et c.. Unintended Usage of TO SHIBA pr oducts l isted i n this
document shall be made at the customer’s own risk.
• TOSHIBA p roducts shoul d not be e mbedded t o the d ownstream p roducts w hich are pr ohibited t o be pr oduced
and sold, under any law and regulations.
5 2004-07-26
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2SC5172.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SC517 | NPN Transistor |  ETC |
| 2SC5171 | NPN EPITAXIAL TYPE (POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
| 2SC5171 | Silicon NPN Power Transistor |  INCHANGE |
| 2SC5172 | NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATIONS) | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |