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PDF 2SC5171 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5171 | |
| Descripción | NPN EPITAXIAL TYPE (POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5171
Power Amplifier Applications
Driver Stage Amplifier Applications
2SC5171
Unit: mm
• High transition frequency: fT = 200 MHz (typ.)
• Complementary to 2SA1930
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
VCBO
VCEO
VEBO
IC
IB
PC
180 V
180 V
5V
2A
1A
2.0
W
20
JEDEC
―
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA
TOSHIBA
―
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
Free Datasheet http://www.Datasheet4U.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC5171.PDF ] | |
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