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PDF 2SC5154 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5154 | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5154
Power Amplifier Applications
Driver Stage Amplifier Applications
2SC5154
Unit: mm
• High transition frequency: fT = 100 MHz (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
160
160
5
1.5
3.0
0.15
1.3
150
−50 to 150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
VCB = 160 V, IE = 0
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE
(Note)
VCE = 5 V, IC = 100 mA
VCE (sat)
VBE
fT
Cob
IC = 500 mA, IB = 50 mA
VCE = 5 V, IC = 500 mA
VCE = 10 V, IC = 100 mA
VCB = 10 V, IC = 0, f = 1 MHz
Note: hFE classification O: 70 to 140, Y: 120 to 240
Marking
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
Min Typ. Max Unit
― ― 1.0 µA
― ― 1.0 µA
160 ―
―
V
70 ― 240
― ― 1.0 V
― 0.75 0.95
V
― 100 ― MHz
― 25 ― pF
C5154
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-07
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC5154.PDF ] | |
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