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PDF 2SC5127 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5127 | |
| Descripción | Silicon NPN triple diffusion planar type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SC5127, 2SC5127A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SC5127
base voltage 2SC5127A
VCBO
800
900
Collector to 2SC5127
emitter voltage 2SC5127A
VCES
800
900
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCEO
VEBO
ICP
IC
IB
PC
500
8
3.0
1.5
0.5
25
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
9.9±0.3
φ3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SC5127
current
2SC5127A
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 800V, IE = 0
VCB = 900V, IE = 0
100
µA
100
VEB = 5V, IC = 0
100 µA
IC = 10mA, IB = 0
500
V
VCE = 5V, IC = 0.1A
15
VCE = 5V, IC = 0.6A
8
IC = 0.6A, IB = 0.17A
1.0 V
IC = 0.6A, IB = 0.17A
1.5 V
VCE = 10V, IC = 0.1A, f = 1MHz
20 MHz
IC = 0.6A, IB1 = 0.17A, IB2 = – 0.34A,
VCC = 200V
1.0 µs
3.0 µs
0.3 µs
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC5127.PDF ] | |
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