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PDF 2SC5121 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5121 | |
| Descripción | Silicon NPN triple diffusion planar type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SC5121
Silicon NPN triple diffusion planar type
For general amplification
s Features
q High collector to base voltage VCBO
q High collector to emitter VCEO
q Small collector output capacitance Cob
q TO-126 package, which is fitted to a heat sink without any insu-
lation parts
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
400
400
7
100
70
1.2
150
–55 to +150
Unit
V
V
V
mA
mA
W
˚C
˚C
+0.5
8.0 –0.1
Unit: mm
3.2±0.2
φ3.16±0.1
0.75±0.1
0.5±0.1
0.5±0.1
1.76±0.1
4.6±0.2
2.3±0.2
123
1:Emitter
2:Collector
3:Base
JEDEC:TO–126(b)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
ICBO
Hot ICEO
VCB = 300V, IE = 0
VCE = 380V, IB = 0, Ta = 80°C
10 µA
10 µA
Collector to emitter voltage
VCEO
IC = 100µA, IB = 0
400
V
Emitter to base voltage
VEBO
IE = 1µA, IC = 0
7
V
Forward current transfer ratio
hFE
VCE = 10V, IC = 5mA
30 150
Collector to emitter saturation voltage VCE(sat)
IC = 50mA, IB = 5mA
1.2 V
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
50
80
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
4 8 pF
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC5121.PDF ] | |
Hoja de datos destacado
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