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Número de pieza | 2SC5111 | |
Descripción | Silicon NPN Epitaxial Planar Type Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC5111 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5111
2SC5111
For VCO Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
20
10
3
30
60
100
125
−55 to 125
V
V
V
mA
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEDEC
―
operating temperature/current/voltage, etc.) are within the
JEITA
―
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TOSHIBA
2-2H1A
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 2.4 mg (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Insertion gain
Output capacitance
Reverse transfer capacitance
Collector-base time constant
ICBO
IEBO
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 5 V, IC = 5 mA
fT
⎪S21e⎪2
VCE = 5 V, IC = 5 mA
VCE = 5 V, IC = 5 mA, f = 1 GHz
Cob
Cre
Cc・rbb’
VCB = 5 V, IE = 0, f = 1 MHz (Note 2)
VCB = 5 V, IC = 3 mA, f = 30 MHz
⎯
⎯
80
3
6
⎯
⎯
⎯
⎯ 1 μA
⎯ 1 μA
⎯ 240
5 ⎯ GHz
10 ⎯ dB
0.9 ⎯ pF
0.7 1.1 pF
6 15 ps
Note 1: hFE classification O: 80 to 160, Y: 120 to 240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1 2009-10-22
1 page 2SC5111
5 2009-10-22
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2SC5111.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SC5110 | Silicon NPN Epitaxial Planar Type Transistor | Toshiba Semiconductor |
2SC5111 | Silicon NPN Epitaxial Planar Type Transistor | Toshiba Semiconductor |
2SC5111FT | NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION) | Toshiba Semiconductor |
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