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PDF 2SC5109 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5109 | |
| Descripción | NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC5109 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5109
For VCO Application
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
Rating
20
10
3
30
60
150
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
2SC5109
Unit: mm
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Insertion gain
Output capacitance
Reverse transfer capacitance
Collector-base time constant
ICBO
IEBO
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 5 V, IC = 5 mA
fT
ïS21eï2
VCE = 5 V, IC = 5 mA
VCE = 5 V, IC = 5 mA, f = 1 GHz
Cob
Cre
Cc･rbb’
VCB = 5 V, IE = 0, f = 1 MHz (Note 2)
VCB = 5 V, IC = 3 mA, f = 30 MHz
¾
¾
80
4
7
¾
¾
¾
¾ 0.1 mA
¾ 0.1 mA
¾ 240
6 ¾ GHz
11 ¾ dB
0.7 ¾ pF
0.5 0.9 pF
5.5 10
ps
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-24
1 page  
2SC5109
5 2003-03-24
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SC5109.PDF ] | |
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