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PDF 2SC5097 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5097 | |
| Descripción | Silicon NPN Epitaxial Planar Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC5097 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5097
2SC5097
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain.
· NF = 1.8dB, |S21e|2 = 10dB (f = 2 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
Rating
20
10
1.5
7
15
150
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-3J1C
Weight: 0.012 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 6 V, IC = 7 mA
VCE = 6 V, IC = 7 mA, f = 1 GHz
VCE = 6 V, IC = 7 mA, f = 2 GHz
VCE = 6 V, IC = 3 mA, f = 1 GHz
VCE = 6 V, IC = 3 mA, f = 2 GHz
Min Typ. Max Unit
7 10 ¾ GHz
12.5
7
15.5
10
¾
¾
dB
¾ 1.3 2.5
dB
¾ 1.8 3.0
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
IEBO
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 6 V, IC = 7 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Cre
¾
¾
50
¾
¾
Note 1: hFE classification R: 50~100, O: 80~160
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Typ.
¾
¾
Max
1
1
¾ 160
0.5
0.35
0.9
0.85
Unit
mA
mA
pF
pF
1 2003-03-27
1 page  
2SC5097
5 2003-03-27
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SC5097.PDF ] | |
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