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PDF 2SC5087 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5087 | |
| Descripción | Silicon NPN Epitaxial Planar Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC5087 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5087
2SC5087
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain.
• NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 20 V
Collector-emitter voltage
VCEO 12 V
Emitter-base voltage
VEBO 3 V
Base current
IB 40 mA
Collector current
IC 80 mA
Collector power dissipation
PC 150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-3J1C
Weight: 0.012 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
⎪S21e⎪2 (1)
⎪S21e⎪2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA, f = 500 MHz
VCE = 10 V, IC = 20 mA, f = 1 GHz
VCE = 10 V, IC = 5 mA, f = 500 MHz
VCE = 10 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
57
⎯ 18
9.5 13
⎯1
⎯ 1.1
⎯ GHz
⎯
dB
⎯
⎯
dB
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 10 V, IC = 20 mA
⎯ ⎯ 1 μA
⎯ ⎯ 1 μA
80 ⎯ 240
Output capacitance
Reverse transfer capacitance
Cob
⎯ 1.1 1.6 pF
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Cre ⎯ 0.65 1.05 pF
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1 2007-11-01
1 page  
S11e
VCE = 10 V
IC = 5 mA
Ta = 25°C
(Unit: Ω)
j25
2.0
j10 1.6
j50
j100
j150
j250
1.2
0 10 25
0.8
50 100 250
−j10
0.4
−j25
f = 0.2 GHz
−j50
−j250
−j150
−j100
S12e
VCE = 10 V
IC = 5 mA
Ta = 25°C
120°
90°
0.20
0.16
60°
150°
0.12
0.08
2.0
1.6
f = 0.2 GHz
0.04
0.4
1.2
0.8
±180°0.20 0.16 0.12 0.08 0.04 0
30°
0°
−150°
−120°
−90°
−30°
−60°
2SC5087
S21e
VCE = 10 V
IC = 5 mA
Ta = 25°C
120°
90°
16
150°
±180°
16
f = 0.2 GHz
12
0.4
8
0.8
2 1.2
1.6
2.0
12 8 4
0
60°
30°
0°
−150°
−30°
−120°
S22e
VCE = 10 V
IC = 5 mA
Ta = 25°C
(Unit: Ω)
j25
−90°
j50
j10
−60°
j100
j150
j250
0 10
−j10
−j25
25 50 100 250
2.0
1.2
1.6 0.8
−j250
0.4 f = 0.2 GHz
−j150
−j100
−j50
5 2007-11-01
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SC5087.PDF ] | |
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