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PDF 2SC5066 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5066 | |
| Descripción | Silicon NPN Epitaxial Planar Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC5066 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5066
2SC5066
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain.
· NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
Rating
20
12
3
15
30
100
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 10 mA, f = 500 MHz
VCE = 5 V, IC = 10 mA, f = 1 GHz
VCE = 5 V, IC = 3 mA, f = 500 MHz
VCE = 5 V, IC = 3 mA, f = 1 GHz
Min Typ. Max Unit
5 7 ¾ GHz
¾ 17 ¾
dB
8.5 12
¾
¾1¾
dB
¾ 1.1 2.0
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 5 V, IC = 10 mA
Cob VCB = 5 V, IE = 0, f = 1 MHz
Cre
(Note 2)
¾
¾
80
¾
¾
¾1
¾1
¾ 240
0.7
0.45
¾
0.9
mA
mA
pF
pF
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-19
1 page  
2SC5066
5 2003-03-19
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SC5066.PDF ] | |
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