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PDF 2SC5018 Data sheet ( Hoja de datos )

Número de pieza 2SC5018
Descripción Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SC5018 Hoja de datos, Descripción, Manual

Transistor
2SC5018
Silicon NPN triple diffusion planer type
For high breakdown voltage high-speed switching
s Features
q High collector to base voltage VCBO.
q High emitter to base voltage VEBO.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage VCEO
400
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
1.5 A
Collector current IC 0.8 A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
s Electrical Characteristics (Ta=25˚C)
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
123
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.45+–00..105
0.65
max.
(HW type)
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fill time
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 500V, IE = 0
VEB = 7V, IC = 0
VCE = 5V, IC = 10mA
VCE = 5V, IC = 300mA*1
IC = 100mA, IB = 10mA*1
IC = 100mA, IB = 10mA*1
VCB = 10V, IE = –50mA, f = 10MHz
IC = 200mA, IB1 = 40mA
IB2 = –40mA, VCC = 150V
min
50
10
typ max Unit
100 µA
100 µA
300
0.1 0.5
V
0.8 1.0
V
20 MHz
0.7 µs
4.0 µs
0.4 µs
*1 Pulse measurement
1

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