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PDF 2SC4985 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4985 | |
| Descripción | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SC4985
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High collector to base voltage VCBO
q High collector to emitter VCEO
q Allowing automatic insertion with radial taping
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
900
800
7
2
1
1.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
7.5±0.2
Unit: mm
4.5±0.2
90°
0.65±0.1 0.85±0.1
0.7±0.1
1.0±0.1
0.7±0.1
0.8C
0.8C
2.5±0.2
0.8C
0.5±0.1
2.5±0.2
0.4±0.1
2.05±0.2
123
1:Emitter
2:Collector
3:Base
MT3 Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
ICBO
IEBO
VCEO
VCB = 900V, IE = 0
VEB = 7V, IC = 0
IC = 1mA, IB = 0
50 µA
50 µA
800 V
Forward current transfer ratio
Collector to emitter saturation voltage
hFE1
hFE2
VCE(sat)
VCE = 5V, IC = 50mA
VCE = 5V, IC = 500mA
IC = 200mA, IB = 40mA
6
3
1.5 V
Base to emitter saturation voltage VBE(sat)
IC = 200mA, IB = 40mA
1V
Transition frequency
Turn-on time
Storage time
Fall time
fT VCB = 10V, IE = –50mA, f = 200MHz
ton
IC = 200mA, IB1 = 40mA, IB2 = –80mA,
tstg VCC = 250V
tf
80 MHz
1 µs
3 µs
1 µs
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC4985.PDF ] | |
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