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PDF 2SC4935 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4935 | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC4935 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4935
Power Amplifier Applications
2SC4935
Unit: mm
• Good hFE linearity
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
VEBO
IC
IB
PC
5V
3A
0.3 A
2
W
10
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-67
temperature/current/voltage and the significant change in
TOSHIBA
2-10R1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 1.7 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
http://store.iiic.cc/
2010-12-21
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC4935.PDF ] | |
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