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Número de pieza | 2SC4908 | |
Descripción | Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) | |
Fabricantes | Sanken electric | |
Logotipo | ||
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No Preview Available ! 2SC4908
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SC4908
Unit
VCBO
900
V
VCEO
800
V
VEBO
7
V
IC
3(Pulse6)
A
IB 1.5 A
PC
35(Tc=25°C)
W
Tj 150 °C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=0.7A
IC=0.7A, IB=0.14A
IC=0.7A, IB=0.14A
VCE=12V, IE=–0.3A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) (Ω) (A)
(V) (V) (A)
250 357 0.7 10 –5 0.1
IB2
(A)
–0.35
ton
(µs)
1max
(Ta=25°C)
2SC4908
100max
100max
800min
10 to 30
0.5max
1.2max
6typ
40typ
Unit
µA
µA
V
V
V
MHz
pF
tstg
(µs)
5max
tf
(µs)
1max
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2
2.8 c0.5
ø3.3±0.2
a
b
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45 +-00..12
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
BCE
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
3 400mA
300mA
200mA
2
140mA
60mA
1
IB=20mA
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
2
IC/IB=5 Const,
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
3
1
VBE(sat)
2
1
0
0.03 0.05
VCE(sat)
0.1 0.5 1
Collector Current IC(A)
5
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
50
125˚C
25˚C
–30˚C
10
5
2
0.02
0.05
0.1 0.5
Collector Current IC(A)
1
3
t on• t stg• t f– I C Characteristics (Typical)
5
VCC 250V
IC:IB1:IB2=2:0.3:–1
tstg
1
0.5
0.2
0.1
tf
ton
0.5 1
Collector Current IC(A)
3
θ j-a– t Characteristics
4
1
0.5
0.3
1
10 100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
10
5
100µs
1
0.5
Without Heatsink
Natural Cooling
0.1
50
100 500
Collector-Emitter Voltage VCE(V)
1000
Reverse Bias Safe Operating Area
10
5
1
Without Heatsink
0.5 Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
0.1
50
100 500
Collector-Emitter Voltage VCE(V)
1000
Pc–Ta Derating
35
30
20
10
Without Heatsink
2
0
0 25 50
75 100 125
Ambient Temperature Ta(˚C)
150
121
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 2SC4908.PDF ] |
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