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PDF 2SC4898 Data sheet ( Hoja de datos )

Número de pieza 2SC4898
Descripción Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SC4898 Hoja de datos, Descripción, Manual

Power Transistors
2SC4898
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q High-speed switching
q High collector to base voltage VCBO
q Low collector to emitter saturation voltage VCE(sat)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
ICP
IC
PC
1000
500
10
5
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
A
A
W
˚C
˚C
9.9±0.3
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.54±0.3
1 2 3 5.08±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
hFE
VCE(sat)
fT
ton
tstg
tf
VCB = 1000V, IE = 0
VEB = 9V, IC = 0
VCE = 5V, IC = 1A
IC = 3A, IB = 0.6A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 0.6A, IB2 = – 0.6A,
VCC = 250V
min typ max Unit
100 µA
100 µA
20 40
1V
8 MHz
1.5 µs
3 µs
1.0 µs
1

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