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PDF 2SC4840 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4840 | |
| Descripción | Silicon NPN Epitaxial Planar Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4840
2SC4840
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain.
· NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
Rating
20
10
1.5
20
40
100
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 8 V, IC = 20 mA
VCE = 8 V, IC = 20 mA, f = 1 GHz
VCE = 8 V, IC = 20 mA, f = 2 GHz
VCE = 8 V, IC = 5 mA, f = 1 GHz
VCE = 8 V, IC = 5 mA, f = 2 GHz
Min Typ. Max Unit
7 10 ¾ GHz
10 13 ¾
dB
¾7¾
¾ 1.1 2.5
dB
¾ 1.7 ¾
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
IEBO
hFE
Cob
Cre
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 8 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1 MHz (Note)
¾
¾
50
¾
¾
¾
¾
¾
0.6
0.45
1
1
250
¾
0.9
mA
mA
pF
pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-19
1 page  
2SC4840
5 2003-03-19
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SC4840.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SC4840 | Silicon NPN Epitaxial Planar Type Transistor | Toshiba Semiconductor |
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