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PDF 2SC4782 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4782 | |
| Descripción | Silicon NPN epitaxial planer type(For high speed switching) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC4782
Silicon NPN epitaxial planer type
For high speed switching
Unit: mm
s Features
q High-speed switching.
q Low collector to emitter saturation voltage VCE(sat).
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
25
20
5
300
200
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : DV
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
ICBO
IEBO
hFE*
VCB = 10V, IE = 0
VEB = 4V, IC = 0
VCE = 1V, IC = 10mA
0.1 µA
0.1 µA
40 200
Collector to emitter saturation voltage VCE(sat)
IC = 10mA, IB = 1mA
0.17 0.25
V
Base to emitter saturation voltage VBE(sat)
IC = 10mA, IB = 1mA
0.76 1.0
V
Transition frequency
fT VCB = 10V, IE = –10mA, f = 200MHz 200 500
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
2 4 pF
Turn-on time
ton
17 ns
Turn-off time
toff Refer to the measurment circuit
15 ns
Storage time
tstg
7 ns
*hFE Rank classification
Rank
hFE
Marking Symbol
P
40 ~ 80
DVP
Q
60 ~ 120
DVQ
R
90 ~ 200
DVR
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC4782.PDF ] | |
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