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PDF 2SC4781 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4781 | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4781
Strobe Flash Applications
Medium Power Amplifier Applications
2SC4781
Unit: mm
• High DC current gain and Excellent hFE linearity
: hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A)
: hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 80
mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
30
30
10
6
4
8
0.8
900
150
−55 to 150
V
V
V
A
A
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
http://store.iiic.cc/
2006-11-10
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC4781.PDF ] | |
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