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PDF 2SC4682 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4682 | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC4682 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4682
Strobe Flash Applications
Medium Power Amplifier Applications
2SC4682
Unit: mm
• Excellent hFE linearity: hFE (1) = 800 to 3200 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 500 (typ.) (VCE = 1 V, IC = 3 A)
• Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 3 A, IB = 30 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCES
V (BR) CEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
30
30
15
6
3
6
0.8
900
150
−55 to 150
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCB = 30 V, IE = 0
VEB = 6 V, IC = 0
IC = 10 mA, IB = 0
VCE = 1 V, IC = 0.5 A
VCE = 1 V, IC = 3 A
IC = 3 A, IB = 30 mA
VCE = 1 V, IC = 3 A
VCE = 1 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 1 µA
― ― 10 µA
15 ― ―
V
800 ― 3200
300 500
―
― 0.25 0.5
V
― 0.85 1.2
V
― 150 ― MHz
― 30 ― pF
1 2004-07-26
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC4682.PDF ] | |
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