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Número de pieza ELM9745CAA-S
Descripción CMOS voltage detector IC for battery-operated portable devices
Fabricantes ETC 
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ELM97xxxxA VOLTAGE DETECTOR
GENERAL DESCRIPTION
ELM 97xxxxA Series is a CMOS voltage detector IC for battery-operated portable devices. It consists of a
very low-power-consumption reference voltage source, a comparator, an output driver, a hysteresis circuit,
and detection voltage setting resistors. Output logic is positive, therefore output level is low when VDD is
lower than detection voltage.
It can be used as a reset controller in microcomputer-based systems. And it can be widely applied to the
devices, such as battery checkers, switching circuit of back-up power source, power failure detectors, etc.
Two output styles are available, N-ch opendrain and CMOS output.
It is available in SOT-89 and SOT-23.
FEATURES
Low power operation
: TYP. 1.0 μ A (VDD = 1.5V)
Low voltage operation
: Reset operation assured at 0.8V
High accuracy of detection voltage : ± 2.5%
Low temperature coefficient
: TYP. -300ppm/(Detection voltage 2.0V)
: TYP. -100ppm/(Detection voltage 2.0V)
Very small package
: SOT-89, SOT-23
APPLICATION
Reset for microcomputer
Battery checker
Power failure detector
Switching of back-up power source
PIN CONFIGURATION
SOT-89
123
( TOP VIEW )
Pin No.
1
2
3
Pin Name
OUT
VDD
VSS
3
SOT-23
12
( TOP VIEW )
Pin No.
1
2
3
Pin Name
OUT
VSS
VDD
147

1 page




ELM9745CAA-S pdf
VOLTAGE DETECTOR ELM97xxxxA
ELECTRICAL CHARACTERISTICS
ELM9709NBA
Parameter
Detection Voltage
Hysteresis width
Current Consumption
Operating Voltage
Output Current
Delay Time
Temperature
Characteristics
of VDETN
ELM9710NBA
Parameter
Detection Voltage
Hysteresis width
Current Consumption
Operating Voltage
Output Current
Delay Time
Temperature
Characteristic
of VDETN
ELM9711NBA
Parameter
Detection Voltage
Hysteresis width
Current Consumption
Operating Voltage
Output Current
Delay Time
Temperature
Characteristic
of VDETN
Symbol
VDETN
VHYS
ISS
VDD
IOUTN
tPHL
Conditions
Min.
0.878
VDETN
×0.02
VDD=1.5V
-
0.8
VDD=0.8V, VDS=0.5V 0.02
Typ.
0.900
-
1.0
-
0.1
2.0
Max.
0.922
VDETN
×0.08
3.0
6.0
-
(Top=25)
Units Remarks
V2
V2
μA 1
V2
mA 3
mS 5
VDETN
Top
Top=-30+80
- -0.27 - mV/-
Symbol
VDETN
VHYS
ISS
VDD
IOUTN
tPHL
Conditions
Min.
0.975
VDETN
×0.02
VDD=1.5V
-
0.8
VDD=0.8V, VDS=0.5V 0.02
Typ.
1.000
-
1.0
-
0.1
2.0
Remarks ) Test circuit No.
Max.
1.025
VDETN
×0.08
3.0
6.0
-
(Top=25)
Units Remarks
V2
V2
μA 1
V2
mA 3
mS 5
VDETN
Top
Top=-30+80
- -0.30 - mV/-
Symbol
VDETN
VHYS
ISS
VDD
IOUTN
tPHL
Conditions
Min.
1.073
VDETN
×0.02
VDD=1.5V
-
0.8
VDD=0.8V, VDS=0.5V 0.02
Typ.
1.100
-
1.0
-
0.1
2.0
Remarks ) Test circuit No.
Max.
1.127
VDETN
×0.08
3.0
6.0
-
(Top=25)
Units Remarks
V2
V2
μA 1
V2
mA 3
mS 5
VDETN
Top
Top=-30+80
- -0.33 - mV/-
Remarks ) Test circuit No.
151

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