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PDF 4AK26 Data sheet ( Hoja de datos )
| Número de pieza | 4AK26 | |
| Descripción | Silicon N-Channel Power MOS FET Array | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 4AK26 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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4AK26
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
RDS(on) ≤ 0.06 , VGS = 10 V, ID = 5 A
RDS(on) ≤ 0.075 , VGS = 4 V, ID = 5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver and solenoid driver and lamp driver
Outline
SP-12
1
G
2
D5
G
4
D8
G
9
D 12
G
11
D
1 2 3 4 5 6 7 8 9101112
S 3 S 6 S 7 S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
1 page  
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
2 ID = 50 A
1 20 A
10 A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
4AK26
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
VGS = 4 V
0.1
0.05 10 V
0.02
0.01
0.005
1
2 5 10 20 50 100
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Temperature
0.10
Pulse Test
ID = 20 A
0.08 10 A
0.06
VGS = 4 V
0.04
0.02
VGS = 10 V
20 A 5 A
10 A
5A
0
–40 0 40 80 120 160
Case Temperature TC (°C)
Forward Transfer Admittance
vs. Drain Current
100
VDS = 10 V
50 Pulse Test
–25°C
TC = 25°C
20
10 75°C
5
2
1
0.5 1.0 2
5 10 20
Drain Current ID (A)
50
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 4AK26.PDF ] | |
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