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PDF 41C16257 Data sheet ( Hoja de datos )
| Número de pieza | 41C16257 | |
| Descripción | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
| Fabricantes | Integrated Silicon Solution Inc | |
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IS41C16257
IS41LV16257
256K x 16 (4-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
ISSI®
MAY 1999
FEATURES
• Fast access and cycle time
• TTL compatible inputs and outputs
• Refresh Interval: 512 cycles/8 ms
• Refresh Mode: RAS-Only, CAS-before-RAS (CBR),
and Hidden
• JEDEC standard pinout
• Single power supply:
-- 5V ± 10% (IS41C16257)
-- 3.3V ± 10% (IS41LV16257)
• Byte Write and Byte Read operation via two CAS
• Industrial temperature available
DESCRIPTION
The ISSI IS41C16257 and the IS41LV16257 are 262,144
x 16-bit high-performance CMOS Dynamic Random Access
Memories. Fast Page Mode allows 512 random accesses
within a single row with access cycle time as short as 12 ns
per 16-bit word. The Byte Write control, of upper and lower
byte, makes these devices ideal for use in 16- and 32-bit
wide data bus systems.
These features make the IS41C16257 and the IS41LV16257
ideally suited for high band-width graphics, digital signal
processing, high-performance computing systems, and
peripheral applications.
The IS41C16257 and the IS41LV16257 are packaged in a
40-pin, 400-mil SOJ and TSOP (Type II).
KEY TIMING PARAMETERS
Parameter
Max. RAS Access Time (tRAC)
Max. CAS Access Time (tCAC)
Max. Column Address Access Time (tAA)
Min. Fast Page Mode Cycle Time (tPC)
Min. Read/Write Cycle Time (tRC)
-35 -60 Unit
35 60 ns
10 15 ns
18 30 ns
12 25 ns
60 110 ns
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
DR004-1B
05/24/99
1
1 page  
IS41C16257
IS41LV16257
ISSI®
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameters
Rating
Unit
VT
VCC
IOUT
PD
TA
TSTG
Voltage on Any Pin Relative to GND 5V
3.3V
Supply Voltage
5V
3.3V
Output Current
Power Dissipation
Operation Temperature
Com.
Ind.
Storage Temperature
–1.0 to +7.0
–0.5 t0 +4.6
–1.0 to +7.0
–0.5 t0 +4.6
50
1
0 to 70
–40 to +85
–55 to +125
V
V
mA
W
°C
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND)
Symbol
VCC
VCC
VIH
VIH
VIL
VIL
TA
Parameter
Voltage
Supply Voltage
Supply Voltage
Input High Voltage
Input High Voltage
Input Low Voltage
Input Low Voltage
Ambient Temperature
5V
3.3V
5V
3.3V
5V
3.3
Com.
Ind.
Min.
4.5
3.0
2.4
2.0
–1.0
–0.3
0
–40
Typ.
5.0
3.3
—
—
—
—
—
—
Max.
5.5
3.6
VCC + 1.0
VCC + 0.3
0.8
0.8
70
85
Unit
V
V
V
V
V
V
°C
CAPACITANCE(1,2)
Symbol Parameter
Max.
Unit
CIN1 Input Capacitance: A0-A8
CIN2 Input Capacitance: RAS, UCAS, LCAS, WE, OE
CIO Data Input/Output Capacitance: I/O0-I/O15
5 pF
7 pF
7 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VCC = 5.0V + 10% or Vcc=3.3V ± 10%.
Integrated Silicon Solution, Inc. — 1-800-379-4774
DR004-1B
05/24/99
5
5 Page 
IS41C16257
IS41LV16257
FAST PAGE MODE READ-MODIFY-WRITE CYCLE
ISSI®
RAS
tRASP
tRP
tCRP
UCAS/LCAS
tRCD
tCSH
tCAS
ADDRESS
tAR
tRAH
tASR
tRAD
Row
tCAH
tASC
Column
tAR
WE
tRCS
tCWL
tRWD
tAWD
tCWD
tAA
tCAC
OE tOEA
tPRWC
tCAS
tCP
tRSH
tCAS
tCP
tCRP
tCPWD
tASC
tCAH
Column
tCWL
tAWD
tWP tCWD
tCPWD
tRAL
tCAH
tASC
Column
tCWL
tRWL
tAWD
tWP tCWD
tWP
tAA
tCAC
tOEA
tAA
tCAC
tOEA
I/O0-I/O15
tRAC
tCLZ
OUT
tOEZ
tOED
tDH
tDS tCLZ
IN
tOEZ
tOED
tDS
tDH
OUT IN
tCLZ
OUT
tOEZ
tOED
tDS
tDH
IN
Don't Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
DR004-1B
05/24/99
11
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet 41C16257.PDF ] | |
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