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PDF BA682 Data sheet ( Hoja de datos )

Número de pieza BA682
Descripción Silicon Epitaxial Planar Diode Switches
Fabricantes Semtech Corporation 
Logotipo Semtech Corporation Logotipo



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No Preview Available ! BA682 Hoja de datos, Descripción, Manual

BA682, BA683
SILICON EPITAXIAL PLANAR DIODE SWITCHES
In MiniMELF case especially suited for automatic insertion for
electronic band-switching in radio and TV tuners in the
frequency range of 50 to 1000 MHz .The dynamic forward
resistance is constant and very small over a wide range of
frequency and forward current. The reverse capacitance is
also small and largely independent of the reverse voltage.
These diodes are delivered taped.
Details see “Taping”.
Absolute Maximum Ratings (T a = 25oC)
Reverse Voltage
Forward Current at Tamb = 25oC
Junction Temperature
Storage Temperature Range
Symbol
VR
IF
Tj
TS
Value
35
100
150
-55 to +150
Unit
V
mA
OC
OC
Characteristics at T j = 25oC
Forward Voltage
at IF = 100mA
Leakage Current
at VR = 20V
Dynamic Forward Resistance
at f = 50 to 1000 MHz, IF = 3mA
at f = 50 to 1000 MHz, IF = 10mA
Capacitance
at VR = 1V, f = 1MHz
at VR = 3V, f = 1MHz
Series Inductance across Case
BA682
BA683
BA682
BA683
BA682
BA683
Symbol Min.
VF -
IR -
rf -
rf -
rf -
rf -
Typ.
-
-
-
-
-
-
Ctot -
Ctot -
Ctot -
LS -
-
-
-
2
Max.
1
50
0.7
1.2
0.5
0.9
1.5
1.25
1.2
-
Unit
V
nA
Ω
Ω
Ω
Ω
pF
pF
pF
nH
РАДИОТЕХ
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: [email protected]
Веб: www.rct.ru
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