DataSheet.es    


PDF FQU2N90 Data sheet ( Hoja de datos )

Número de pieza FQU2N90
Descripción 900V N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de FQU2N90 (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! FQU2N90 Hoja de datos, Descripción, Manual

FQD2N90 / FQU2N90
N-Channel QFET® MOSFET
900 V, 1.7 A, 7.2 Ω
January 2014
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max.) @ VGS = 10 V,
ID = 0.85 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 5.5 pF)
• 100% Avalanche Tested
• RoHS Compliant
D
D
G
S
D-PAK
GDS
I-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
*
4
4
*
< 
4
<
!5
8
  

Parameter
   *  
   
   
  0,-261
  0,%))61
8 
  
:  *  
  8 '! < 
  
'!  
  
+!'! < 
  
8 >+ !!5
8  0 ,-261@
8  0,-261
  "!-26
  
      + 
 C        
%57  2  
FQD2N90TM
FQU2N90TU_WS
FQU2N90TU_AM002
())
%&
% )7
97
±;)
%&)
%&
2)
?)
-2
2)
)?
22B%2)
;))
Unit
*
'
'
'
*
=
'
=
*5 
A
A
A56
6
6
Thermal Characteristics
Symbol
Parameter
FQD2N90TM
FQU2N90TU_WS
FQU2N90TU_AM002
RJC
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 pad of 2 oz copper), Max.
2.5
110
50
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
FQD2N90 / FQU2N90 Rev. C2
1
www.fairchildsemi.com

1 page




FQU2N90 pdf
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = co3nmsAt.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
V1G0GVSS
tp
DUT
VDD VDS (t)
t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FQD2N90 / FQU2N90 Rev. C2
5
www.fairchildsemi.com

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet FQU2N90.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
FQU2N90900V N-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar