|
|
Número de pieza | FQU1N60 | |
Descripción | 600V N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FQU1N60 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! FQD1N60 / FQU1N60
600V N-Channel MOSFET
April 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
• 1.0A, 600V, RDS(on) = 11.5Ω @VGS = 10 V
• Low gate charge ( typical 5.0 nC)
• Low Crss ( typical 3.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
D
!
"
!"
G!
"
"
!
S
FQD1N60 / FQU1N60
600
1.0
0.63
4.0
±30
50
1.0
3.0
4.5
2.5
30
0.24
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Typ
Max
Units
--
4.17
°CW
-- 50 °CW
-- 110 °CW
Rev. A, April 2000
1 page Gate Charge Test Circuit & Waveform
50K
Same Type
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS =
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
10V
tp
DUT
VDD VDS (t)
t p Time
©2000 Fairchild Semiconductor International
Rev. A, April 2000
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet FQU1N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
FQU1N60 | 600V N-Channel MOSFET | Fairchild Semiconductor |
FQU1N60C | 600V N-Channel MOSFET | Fairchild Semiconductor |
FQU1N60C | 600V N-Channel MOSFET | Kersemi Electronic |
FQU1N60C | N-Channel MOSFET | HAOHAI |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |