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PDF FQPF27P06 Data sheet ( Hoja de datos )
| Número de pieza | FQPF27P06 | |
| Descripción | 60V P-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQPF27P06
P-Channel QFET® MOSFET
-60 V, -17 A, 26 mΩ
March 2013
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
• -17 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-8.5 A
• Low Gate Charge (Typ. 33 nC)
• Low Crss (Typ. 120 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
GD S
TO-220F
G!
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
S
!
●
●
▶▲
●
!
D
FQPF27P06
-60
-17
-12
-68
± 25
560
-17
4.7
-7.0
47
0.31
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ Max
-- 3.19
-- 62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
FQPF27P06 Rev. C0
www.fairchildsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
-10V
Qg
VGS
VDS
Qgs Qgd
-3mA
DUT
Charge
Resistive Switching Test Circuit & Waveforms
-10V
VDS
VGS
RG
RL
VDD
DUT
td(on)
VGS
10%
t on
tr
VDS
90%
t off
td(off)
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L
VDS
EAS =
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
t p Time
ID
RG
VDD
VDD
ID (t)
VDS (t)
-10V
tp
DUT
IAS
BVDSS
©2001 Fairchild Semiconductor Corporation
FQPF27P06 Rev. C0
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FQPF27P06.PDF ] | |
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