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PDF FQPF13N06L Data sheet ( Hoja de datos )

Número de pieza FQPF13N06L
Descripción 60V LOGIC N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FQPF13N06L
N-Channel QFET® MOSFET
60 V, 10 A, 110 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
November 2013
Features
• 10 A, 60 V, RDS(on) = 110 m(Max.) @ VGS = 10 V,
ID = 5 A
• Low Gate Charge (Typ. 4.8 nC)
• Low Crss (Typ. 17 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQPF13N06L
60
10
7.1
40
± 20
90
10
2.4
7.0
24
0.16
-55 to +175
300
FQPF13N06L
6.20
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
FQPF13N06L Rev. C1
1
www.fairchildsemi.com

1 page




FQPF13N06L pdf
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = co3nmsAt.
DUT
Figure 12. Gate Charge Test Circuit & Waveform
Charge
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 13. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
V1G0GVSS
tp
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
Time
©2001 Fairchild Semiconductor Corporation
FQPF13N06L Rev. C1
5
www.fairchildsemi.com

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