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Número de pieza | FQP9P25 | |
Descripción | 250V P-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FQP9P25 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! FQP9P25
250V P-Channel MOSFET
December 2000
QFETTM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC converters.
Features
• -9.4A, -250V, RDS(on) = 0.62Ω @VGS = -10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 27 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GD S
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G!
S
!
●
●
▶▲
●
!
D
FQP9P25
-250
-9.4
-5.9
-37.6
± 30
650
-9.4
12
-5.5
120
0.96
-55 to +150
300
Typ Max
-- 1.04
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
1 page Gate Charge Test Circuit & Waveform
50KΩ
Same Type
as DUT
12V 200nF
300nF
VGS
-10V
Qg
VGS
VDS
Qgs Qgd
-3mA
DUT
Charge
Resistive Switching Test Circuit & Waveforms
-10V
VDS
VGS
RG
RL
VDD
DUT
td(on)
VGS
10%
t on
tr
VDS
90%
t off
td(off)
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L
VDS
EAS =
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
t p Time
ID
RG
VDD
VDD
ID (t)
VDS (t)
-10V
tp
DUT
IAS
BVDSS
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FQP9P25.PDF ] |
Número de pieza | Descripción | Fabricantes |
FQP9P25 | 250V P-Channel MOSFET | Fairchild Semiconductor |
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