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PDF FQP1N60 Data sheet ( Hoja de datos )
| Número de pieza | FQP1N60 | |
| Descripción | QFET N-CHANNEL | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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QFET N-CHANNEL
FEATURES
• Advanced New Design
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• Unrivalled Gate Charge: 5.0nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON): 9.3Ω (Typ.)
ABSOLUTE MAXIMUM RATINGS
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Characteristics
Drain-to-Source Voltage
Continuous Drain Current (TC = 25°C)
Continuous Drain Current (TC = 100°C)
Drain Current-Pulsed
x
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
y
Avalanche Current
x
Repetitive Avalanche Energy
x
Peak Diode Recovery dv/dt
z
Total Power Dissipation (TC = 25°C)
Linear Derating Factor
Operating Junction and Storage
Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
THERMAL RESISTANCE
Symbol
RθJC
RθCS
RθJA
Characteristics
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
FQP1N60
BVDSS = 600V
RDS(ON) = 11.5Ω
ID = 1.2A
TO-220
1
2
3
1. Gate 2. Drain 3. Source
Value
600
1.2
0.76
4.8
±30
50
1.2
4.0
4.5
40
0.32
−55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
−
0.5
−
Max.
3.13
−
62.5
Units
°C/W
© 1999 Fairchild Semiconductor Corporation
REV. B
1
1 page  
QFET N-CHANNEL
FQP1N60
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
50K as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs
Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FQP1N60.PDF ] | |
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