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PDF FQP19N10L Data sheet ( Hoja de datos )

Número de pieza FQP19N10L
Descripción 100V LOGIC N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FQP19N10L Hoja de datos, Descripción, Manual

FQP19N10L
100V LOGIC N-Channel MOSFET
August 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as high efficiency
switching DC/DC converters, and DC motor control.
Features
• 19A, 100V, RDS(on) = 0.1@VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
G DS
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQP19N10L
100
19
13.5
76
± 20
220
19
7.5
6.0
75
0.5
-55 to +175
300
Typ Max
-- 2.0
0.5 --
-- 62.5
©2000 Fairchild Semiconductor International
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev. A, August 2000

1 page




FQP19N10L pdf
Gate Charge Test Circuit & Waveform
50KΩ
Same Type
as DUT
12V 200nF
300nF
VGS
5V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
VDS
90%
5V
DUT
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
©2000 Fairchild Semiconductor International
Rev. A, August 2000

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