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PDF FQD17N08 Data sheet ( Hoja de datos )
| Número de pieza | FQD17N08 | |
| Descripción | 80V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FQD17N08 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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FQD17N08 / FQU17N08
80V N-Channel MOSFET
January 2001
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
high efficiency switching for DC/DC converters, and DC
motor control.
Features
• 12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 28 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D!
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
"
!"
G!
"
"
!
S
FQD17N08 / FQU17N08
80
12.9
8.2
51.6
± 25
100
12.9
4.0
6.5
2.5
40
0.32
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Typ Max Units
-- 3.13 °C/W
-- 50 °C/W
-- 110 °C/W
Rev. A1, January 2001
1 page  
Gate Charge Test Circuit & Waveform
50KΩ
Same Type
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
©2000 Fairchild Semiconductor International
Rev. A1, January 2001
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FQD17N08.PDF ] | |
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