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Número de pieza | FQD13N06L | |
Descripción | 60V LOGIC N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FQD13N06L (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! FQD13N06L / FQU13N06L
60V LOGIC N-Channel MOSFET
May 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 11A, 60V, RDS(on) = 0.115Ω @VGS = 10 V
• Low gate charge ( typical 4.8 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
D
D!
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD13N06L / FQU13N06L
60
11
7
44
± 20
90
11
2.8
7.0
2.5
28
0.22
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Typ Max Units
-- 4.5 °C/W
-- 50 °C/W
-- 110 °C/W
Rev. A1. May 2001
1 page Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
5V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
VDS
90%
5V
DUT
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS =
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
10V
tp
DUT
VDD VDS (t)
t p Time
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet FQD13N06L.PDF ] |
Número de pieza | Descripción | Fabricantes |
FQD13N06 | 60V N-Channel MOSFET | Fairchild Semiconductor |
FQD13N06L | 60V LOGIC N-Channel MOSFET | Fairchild Semiconductor |
FQD13N06TM | 60V N-Channel MOSFET | Fairchild Semiconductor |
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