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PDF FQB6P25 Data sheet ( Hoja de datos )

Número de pieza FQB6P25
Descripción 250V P-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FQB6P25 Hoja de datos, Descripción, Manual

FQB6P25 / FQI6P25
250V P-Channel MOSFET
April 2000
QFETTM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
Features
• -6.0A, -250V, RDS(on) = 1.1@VGS = -10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
G!
S
!




!
D
FQB6P25 / FQI6P25
-250
-6.0
-3.8
-24
±30
540
-6.0
9.0
-5.5
3.13
90
0.72
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Typ
Max
Units
--
1.39
°CW
-- 40 °CW
--
62.5
°CW
©2000 Fairchild Semiconductor International
Rev. A, April 2000

1 page




FQB6P25 pdf
Gate Charge Test Circuit & Waveform
50K
Same Type
as DUT
12V 200nF
300nF
VGS
-10V
Qg
VGS
VDS
Qgs Qgd
-3mA
DUT
Charge
Resistive Switching Test Circuit & Waveforms
-10V
VDS
VGS
RG
RL
VDD
DUT
td(on)
VGS 10%
t on
tr
VDS
90%
t off
td(off)
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L
VDS
ID
EAS =
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
t p Time
RG
VDD
VDD
ID (t)
VDS (t)
-10V
tp
DUT
IAS
BVDSS
©2000 Fairchild Semiconductor International
Rev. A, April 2000

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