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PDF FQB60N03L Data sheet ( Hoja de datos )
| Número de pieza | FQB60N03L | |
| Descripción | N-Channel Logic Level PWM Optimized Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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October 2002
FQB60N03L
N-Channel Logic Level PWM Optimized Power MOSFET
General Description
This device employs a new advanced MOSFET technology
and features low gate charge while maintaining low on-
resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
Features
• Fast switching
• rDS(ON) = 0.010Ω (Typ), VGS = 10V
• rDS(ON) = 0.017Ω (Typ), VGS = 5V
• Qg (Typ) = 13nC, VGS = 5V
• Qgd (Typ) = 4.5nC
• CISS (Typ) = 1650pF
DRAIN
(FLANGE)
D
GATE
SOURCE
G
TO-263AB
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
PD
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
Package Marking and Ordering Information
Device Marking
FQB60N03L
Device
FQB60N03L
Package
TO-263AB
Reel Size
330mm
S
Ratings
30
±16
51
27
7
Figure 4
62
0.5
-55 to 150
2
62
43
Tape Width
24mm
Units
V
V
A
A
A
A
W
W/oC
oC
oC/W
oC/W
oC/W
Quantity
800 units
©2002 Fairchild Semiconductor Corporation
FQB60N03L Rev. B
1 page  
Typical Characteristic (Continued) TC = 25°C unless otherwise noted
2000
1000
CISS = CGS + CGD
COSS ≅ CGS + CGD
10
VDD = 15V
8
6
CRSS = CGD
VGS = 0V, f = 1MHz
100
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 11. Capacitance vs Drain to Source
Voltage
4
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 51A
ID = 27A
10 20
Qg, GATE CHARGE (nC)
30
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
150
VGS = 4.5V, VDD = 15V, ID = 12A
100
tr td(OFF)
50 tf
td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
Figure 13. Switching Time vs Gate Resistance
Test Circuits and Waveforms
200
VGS = 10V, VDD = 15V, ID = 12A
150
td(OFF)
100
tf
tr
50
td(ON)
0
0
10 20 30 40
RGS, GATE TO SOURCE RESISTANCE (Ω)
50
Figure 14. Switching Time vs Gate Resistance
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
Figure 15. Unclamped Energy Test Circuit
tP
IAS
BVDSS
VDS
VDD
0
tAV
Figure 16. Unclamped Energy Waveforms
©2002 Fairchild Semiconductor Corporation
FQB60N03L Rev. B
5 Page 
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
Bottomless™
FACT Quiet Series™
FAST®
CoolFET™
FASTr™
CROSSVOLT™ FRFET™
DOME™
GlobalOptoisolator™
EcoSPARK™
E2CMOS™
EnSigna™
GTO™
HiSeC™
I2C™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I1
11 Page | ||
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