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PDF FP1510SOT89 Data sheet ( Hoja de datos )
| Número de pieza | FP1510SOT89 | |
| Descripción | LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT | |
| Fabricantes | Filtronic Compound Semiconductors | |
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Preliminary Data Sheet FP1510SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
• FEATURES
♦ 28 dBm Output Power at 1-dB Compression at 1.8 GHz
♦ 19 dB Power Gain at 1.8 GHz
♦ 1.0 dB Noise Figure
♦ 45 dBm Output IP3 at 1.8 GHz
♦ 50% Power-Added Efficiency
• DESCRIPTION AND APPLICATIONS
The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed
“mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial
structure and processing have been optimized for reliable high-power applications. The FP1510 also
features Si3N4 passivation and is available in die form or in other packages.
Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN
systems, and other types of wireless infrastructure systems.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C
Parameter
Symbol
Test Conditions
Saturated Drain-Source Current
LP1510SOT89-1
IDSS
VDS = 2 V; VGS = 0 V
LP1510SOT89-2
LP1510SOT89-3
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
P-1dB
G-1dB
PAE
Noise Figure
Output Third-Order Intercept Point
NF
IP3
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
IMAX
GM
IGSO
VP
|VBDGS|
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS;
PIN = 15 dBm
VDS = 5 V; IDS = 50% IDSS
VDS = 5V; IDS = 50% IDSS;
PIN = -1 dBm
VDS = 2 V; VGS = 1 V
VDS = 2 V; VGS = 0 V
VGS = -5 V
VDS = 2 V; IDS = 8 mA
IGS = 8 mA
Gate-Drain Breakdown
Voltage Magnitude
frequency=1.8 GHz
|VBDGD|
IGD = 8 mA
Min Typ Max Units
375 420
451 490
527 560
26.5 28
17 19
50
1.0
45
300
-0.25
10
925
400
10
-1.2
12
10 13
450 mA
526 mA
600 mA
dBm
dB
%
dB
dBm
mA
mS
100 µA
-2.0 V
V
V
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 2/26/02
Email: [email protected]
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet FP1510SOT89.PDF ] | |
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