(PDF) FMMV109 Datasheet - SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE

Número de pieza	FMMV109
Descripción	SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE
Fabricantes	Zetex Semiconductors
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No Preview Available ! SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 – JANUARY 1998 PIN CONFIGURATION 1 PARTMARKING DETAIL FMMV109 – 4A FMMV109 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL Ptot Tj:Tstg VALUE 330 -55 to +150 UNIT mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Reverse Breakdown Voltage VBR 30 V IR = 10µA Reverse current Series Inductance Diode Capacitance Temperature Coefficient IR LS TCC 10 3.0 280 nA VR = 25V nH f=250MHz ppm/ °C VR = 3V, f=1MHz Case Capacitance CC 0.1 pF f=1MHz TUNING CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Diode Capacitance Cd 26 32 Capacitance Ratio Cd / Cd 5.0 6.5 Figure of MERIT Q 200 250 Spice parameter data is available upon request for this device pF VR = 3V, f=1MHz VR = 3V/25V, f=1MHz VR = 3V, f=50MHz 1 page

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PDF FMMV109 Data sheet ( Hoja de datos )