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PDF FMMTH10 Data sheet ( Hoja de datos )
| Número de pieza | FMMTH10 | |
| Descripción | NPN SILICON PLANAR RF TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 NPN SILICON PLANAR
RF TRANSISTOR
ISSUE 2 NOVEMBER 1995
FEATURES
* High fT=650MHz
* Maximum capacitance 0.7pF
* Low noise < 5dB at 500MHz
FMMTH10
E
C
PARTMARKING DETAIL 3EZ
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
VCES
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Pulse Current
ICM
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. MAX. UNIT
30
25
3
25
50
330
-55 to +150
CONDITIONS.
V
V
V
mA
mA
mW
°C
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
V(BR)CBO
V(BR)CEO
30
25
V IC=100µA, IE=0
V IC=1mA, IB=0
Emitter-Base Breakdown
Voltage
V(BR)EBO
3
V IE=10µA, IC=0
Collector Cut-Off
Current
ICBO
100 nA
VCB=25V, IE=0
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation VCE(sat)
Voltage
100 nA
0.5 V
VEB=2V,IC=0
IC=4mA, IB=0.4mA
Common Base Feedback
Capacitance
Crb
Typ. 0.65 pF
0.45
VCB=10V, IE=0
f=1MHz
Base-Emitter Turn-On
Voltage
VBE(on)
0.95 V
IC=4mA, VCE=10V
Static Forward Current
Transfer Ratio
hFE
60
IC=4mA, VCE=10V*
Transition Frequency
fT
Collector Base Capacitance Ccb
Collector Base Time Constant rbCc
Noise Figure
Nf
650
Typ.
3
0.7
9
5
MHz
pF
ps
dB
IC=4mA, VCE=10V, f=100MHz
VCB=10V, IE=0, f=1MHz
IC=4mA, VCB=10V, f=31.8MHz
IC=2mA, VCE=5V
f=500MHz,
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 181
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FMMTH10.PDF ] | |
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