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PDF FMMT6517 Data sheet ( Hoja de datos )
| Número de pieza | FMMT6517 | |
| Descripción | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 NOVEMBER 1995
FEATURES
* 350 Volt VCEO
* Gain of 15 at IC=100mA
7
APPLICATIONS
* SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS
FMMT6517
E
C
B
COMPLEMENTARY TYPE - FMMT6520
PARTMARKING DETAIL - 517
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
350 V
Collector-Emitter Voltage
VCEO
350 V
Emitter-Base Voltage
VEBO
5V
Continuous Collector Current
IC 500 mA
Power Dissipation at Tamb= 25°C
Ptot
330 mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages
Cut-Off Currents
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
350
350
5
VBE(sat)
VBE(on)
V
V
V
50 nA
50 nA
0.3 V
0.35 V
0.5 V
1.0 V
0.80 V
0.85 V
0.90 V
2.0 V
IC=100µA, IE=0
IC=1mA, IB=0*
IE=10µA, IC=0
VCB=250V, IE=0
VEB=5V, IC=0
IC=10mA, IB=1mA*
IC=20mA, IB=2mA*
IC=30mA, IB=3mA*
IC=50mA, IB=5mA*
IC=10mA, IB=1mA*
IC=20mA, IB=2mA*
IC=30mA, IB=3mA*
IC=100mA, VCE=10V*
Static Forward Current
Transfer Ratio
hFE
20
30
30 200
20 200
15
IC=1mA, VCE=10V
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
Output Capacitance
Cobo
6 pF VCB=20V, f=1MHz
Transition Frequency
fT
50
MHz
IC=10mA, VCE=20V, f=20MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 171
1 page | ||
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