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PDF FMMT589 Data sheet ( Hoja de datos )
| Número de pieza | FMMT589 | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FMMT589 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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SOT23 PNP SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 5 - JANUARY 1997
7
FEATURES
* Low equivalent on-resistance; RCE(sat) 250mΩ at 1A
PARTMARKING DETAILS - 589
COMPLEMENTARY TYPE - FMMT489
FMMT589
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
-50
-30
-5
-2
-1
-200
500
-55 to +150
V
V
V
A
A
mA
mW
°C
UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -50
V IC=-100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO -30
V IC=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO
Collector Cut-Off Current
ICBO
Collector -Emitter Cut-Off
Current
ICES
-5
-100
-100
V
nA
nA
IE=-100µA
VCB=-30V
VCES=-30V
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
IEBO
VCE(sat)
VBE(sat)
-100
-0.25
-0.35
-0.65
-1.2
nA
V
V
V
V
VEB=-4V
IC=-0.5A, IB=-50mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-1A, IB=-100mA*
Base-Emitter
Turn-on Voltage
VBE(on)
-1.1 V
IC=-1A, VCE=-2V*
Static Forward Current Transfer hFE
Ratio
Transition Frequency
fT
100
100 300
80
40
IC=-1mA, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
100 MHz IC=-100mA, VCE=-5V
f=100MHz
Output Capacitance
Cobo
15 pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical Characteristics graphs see FMMT549 datasheet
3 - 136
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet FMMT589.PDF ] | |
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